Device Electromagnetic Characterization of GaAs MESFET Transistor

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dc.contributor.authorHouda Amri
dc.contributor.authorMourad Zaabat
dc.date.accessioned2023-09-08T15:38:19Z
dc.date.available2023-09-08T15:38:19Z
dc.date.issued2014
dc.description.abstractIn this paper, an electromagnetic study of MESFET transistor based on iterative method is presented. This method is generating the relationship between the incident and reflected waves from the planar circuits. The WCIP method is developed from the fast modal transform algorithm.
dc.identifier.issn2320-2459
dc.identifier.urihttps://dspace.univ-soukahras.dz/handle/123456789/1605
dc.language.isoen
dc.titleDevice Electromagnetic Characterization of GaAs MESFET Transistor
dc.typeArticle

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